Atomic Layer Deposition (ALD) is a method of depositing atomic film layer by layer on crystal surface by atomic layer deposition technology. ALD atomic layer deposition equipment is the key equipment used to implement ALD film preparation, it is achieved by controlling the reaction flow and gas flow, layer by layer of atoms on the crystal surface to form the desired film. This paper briefly introduces the principle, application and development prospect of ALD atomic layer deposition equipment.

First, ALD principle

The ALD atomic layer deposition device achieves layer by layer deposition of thin films based on a surface reaction principle. The ALD process typically consists of two reactants, called precursor A and precursor B, which form a thin film layer by layer on the crystal surface by vapor deposition. The specific process is as follows:

1. Precursor A is adsorbed on the crystal surface and reacts with the surface to produce chemisorbed substance;

2. The precursor A is discharged, and then the crystal surface is washed by air flow;

3. The precursor B is introduced to react with the chemisorbed substance on the crystal surface and generate a new chemisorbed substance;

4. The precursor B is discharged, and then the crystal surface is washed through the air flow again.

This is actually a cyclic process, with only one layer of atoms deposited in each cycle, and the desired film can be formed layer by layer through multiple cycles.

Second, ALD equipment structure

ALD atomic layer deposition devices typically have the following basic components:

1. Main body: used to house the reaction chamber and vacuum system, the main body of the equipment is usually composed of stainless steel;

2. Vacuum system: used to provide the required reaction environment to ensure that the pressure in the reaction chamber reaches the required value;

3. Precursor conveying system: used to vaporize or inject the precursor into the reaction chamber, usually through the carrier gas flow;

4. Gas flow system: used to control the flow rate and flow of precursor and carrier gas to ensure the stability of the reaction process;

5. Temperature control system: used to control the temperature of the crystal surface to ensure the stability of the reaction process;

6. Control system: used to control the operation of the equipment and adjust the reaction conditions, including temperature, flow rate, reaction time and other parameters.

Third, ALD equipment application

ALD atomic layer deposition equipment has been widely used in microelectronics, displays, solar cells and other fields. Its main applications include the following aspects:

1. Preparation of electronic devices: ALD equipment can prepare high-quality insulation layer, metal layer and interface layer, which is widely used in the preparation process of electronic devices, such as transistors, memory chips, etc.

2. Photoelectric device preparation: ALD equipment can prepare films with excellent optical properties for the preparation of photoelectric devices, such as displays, solar cells, etc.;

3. Nanomaterials preparation: ALD equipment can prepare nanomaterials with precise thickness and structure for the preparation of nanodevices, such as nanosensors, nanoelectronic devices, etc.

4. Surface modification: ALD equipment can deposit a protective film or modification layer on the crystal surface to improve the physical and chemical properties of the crystal surface and increase the stability and durability of the crystal.

Fourth, ALD equipment development prospects

With the continuous development of science and technology and the increasing application demand, ALD atomic layer deposition equipment has a broad development prospect. At present, ALD technology has been widely used in various fields, and has made breakthrough progress in microelectronics, energy, optoelectronics and other industries.

In the future, with the rapid development of the Internet of Things, artificial intelligence, new energy and other fields, the demand for high-performance, high-reliability, low-power electronic devices and optoelectronic devices will further increase. ALD atomic layer deposition devices will continue to play an important role in these fields with their unique advantages.

In summary, the ALD atomic layer deposition device is a key device for the implementation of ALD film preparation by controlling the reaction flow and gas flow to form the desired film layer by layer on the crystal surface. ALD equipment has a wide range of applications in microelectronics, displays, solar cells and other fields, and will continue to play an important role.